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BFP 640ESD H6327

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BFP 640ESD H6327

Transistor Polarity : NPN

Technology : SiGe

Product Category : RF Bipolar Transistors

Mounting Style : SMD/SMT

Transistor Type : Bipolar

Collector- Emitter Voltage VCEO Max : 4.1 V

Package / Case : SOT-343

DC Collector/Base Gain hfe Min : 110

Packaging : Reel

Configuration : Single Dual Emitter

Manufacturer : Infineon Technologies

Continuous Collector Current : 50 mA

Description : RF Bipolar Transistors RF BIP TRANSISTORS

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The BFP 640ESD H6327,from Infineon Technologies,is RF Bipolar Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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